Power transistor Semiconductors rectifier diode IPM Module 1200V 200A 2MBI200UM-120-50 IGBT Module

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Shenzhen Hitech Development Technology Co., Ltd.4 yrs

CN

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Key attributes

Industry-specific attributes

Type

IGBT MODULE

D/C

IGBT Module

Package

IGBT Module

Other attributes

Model Number

2MBI200UM-120-50

Place of Origin

Japan

Brand Name

IGBT Module

Item

IGBT Module

Product name

Power transistor IPM Module 1200V 50A 7MBR50VB120-50 IGBT Module

Current Rating

200A

Voltage Rating

1200V

Datecode

New

Condition

Original & New

MOQ

1PC

Shipping Ways

DHL, FEDEX, TNT, UPS, EMS, SF, etc.

Part Number

7MBR50VB120-50

Lead time

Quantity (pieces)	1 - 500	> 500
Lead time (days)	7	To be negotiated

Customization

Customized packaging

Min. order: 1

For more customization details, message supplier

Know your supplier

Shenzhen Hitech Development Technology Co., Ltd.

4 yrsLocated in CN

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Product descriptions from the supplier

Minimum order quantity: 100 pieces

$10.00 - $30.00

Quantity

Shipping

Shipping solutions for the selected quantity are currently unavailable

Item subtotal (0 variations 0 items)

$0.00

Shipping total

$0.00

Subtotal

$0.00

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